压接型IGBT器件短路失效管壳爆炸特性及防护方法OA北大核心CSTPCD

Nowadays,press pack insulated gate bipolar transistors(IGBTs)are the core parts of the existing flexible HVDC equipment.In practical applications,owing to high-voltage and large-current working environment,press pack IGBT devices are prone to short-circuited passing effects,which is likely to give rise to structural explosion.In order to research the damage effect of this explosion and its protection,this paper carries out multiple groups of modular multilevel converter(MMC)working experiments,and obtains the deformation characteristics of the structure of the IGBT device short-circuit loss after the explosion of the explosion.Combined with the characteristics of the actual explosion failure,the equivalent TNT explosion equivalent in the actual explosion is initially determined.On this basis,the structural optimization design of IGBT devices is carried out from the perspective of improving the structural anti-explosion capacity,increasing energy leakage channels,and replacing structural materials.Based on the analysis of the failure characteristics of the IGBT device structure and electrical energy characteristics,the numerical simulation model of the IGBT device structure is established,the response characteristics of the explosion structure of the device under different TNT volume and explosive position conditions are analyzed,and then relevant test verification is carried out.The result shows that replacing the ceramic material of the shell to fiber enhanced composite materials can effectively improve the explosion-resistant performance of the structure and reduce the destruction of the device.