中国电机工程学报2024，Vol.44Issue(6)：2386-2407,后插26,23.DOI:10.13334/j.0258-8013.pcsee.230017
宽禁带半导体器件开关振荡研究综述
A Review of Switching Oscillation in Wide Band Gap Semiconductor Devices
摘要
Abstract
Wide band gap semiconductor devices have the advantages of high frequency,high efficiency and high power density.However,the characteristics of low parasitic capacitance,low threshold voltage and fast switching also make them more susceptible to switching oscillation.In this paper,the types,mechanism,sensitive parameters and suppression methods of switching oscillation are reviewed.First,the oscillations are divided into damped oscillations and self-sustained oscillations according to the waveform characteristics,Then,the analysis models of switching oscillation including device model and switching circuit model are established.Based on which the mechanism of two types of oscillations,sensitive parameters,and the influence of each sensitive parameter on oscillation characteristics are studied.Next,the difference and correlation between the two kinds of switching oscillations are analyzed.Finally,the main methods of suppressing switching oscillation are summarized,and the advantages and disadvantages of each method are compared and analyzed.The previous research results are summarized and extended in this paper,aiming to assist researchers in effectively applying wide band gap devices to high-frequency and high-power conversion conditions.关键词
宽禁带半导体/振荡/阻尼振荡/自持振荡/反馈/负电阻Key words
wide band gap semiconductor/oscillation/damped oscillation/self-sustained oscillation/feedback/negative resistance分类
信息技术与安全科学引用本文复制引用
孙帅,林仲康,唐新灵,魏晓光,赵志斌..宽禁带半导体器件开关振荡研究综述[J].中国电机工程学报,2024,44(6):2386-2407,后插26,23.基金项目
国家电网公司总部科技项目(5500-202158438A-0-0-00)Science and Technology Project of State Grid Corporation(5500-202158438A-0-0-00). （5500-202158438A-0-0-00）
