硅基光电探测器空间辐射效应研究进展OACSTPCD

Silicon-based optoelectronic technology combines the advantages of high integration of large-scale IC manufacturing technology with the advantages of large bandwidth,high speed ability of optoelectronic chips,and promotes the wide application of silicon-based op-toelectronic devices in high energy physics experiments,medical imaging and high energy particle colliders.However,photodetectors used in space environment and medical detectors are expected to be subjected to a cumulative fluences of～1012 particles/cm2 during their op-erating cycle,while detectors used in large particle colliders are expected to a radiation fluences of～1014 particles/cm2.In this paper,the advance in space radiation effects of Si-based photodetectors is described in detail,including the radiation effects of Si-based photodiodes,avalanche photodiodes,single photon detectors and photomultiplier after irradiation by different particles.The research results show that the hardness of total ionizing dose for the detector is good,and the displacement damage is the main reason for the degradation of detec-tors'key parameters.Due to the difference in working principle,all kinds of devices show different degradation behavior and degradation mechanism in the space radiation.