功率MOSFET抗单粒子加固技术研究OACSTPCD
Investigation on radiation-hardened technology of single event effect for power MOSFETs
针对功率MOSFET的单粒子效应(SEE)开展了工艺加固技术研究,在单粒子烧毁(SEB)加固方面采用优化的体区掺杂工艺,有效降低了寄生双极晶体管(BJT)增益,抑制了单粒子辐照下的电流正反馈机制.在单粒子栅穿(SEGR)加固方面,通过形成缓变掺杂的外延缓冲层来降低纵向电场梯度,减弱了非平衡载流子在栅敏感区的累积,并开发了台阶栅介质结构提升栅敏感区的临界场强.实验结果表明,经过加固的功率MOSFET在满额漏源工作电压和15 V栅源负偏电压的偏置条件下,单粒子烧毁和栅穿LET值大于75 MeV·cm2/mg.在相同辐照条件下,加固器件的栅源负偏电压达到15～17 V,较加固前的7～10 V有显著提升.
An investigation on radiation-hardened technology of single event effect(SEE)for power MOSFETs is described in the paper.In order to decrease the gain of the parasitic bipolar junction transistor(BJT),an optimized reversed-body implant process is utilized.Mean-while,a variable-doping buffer of epitaxy is designed to reduce the gradient of vertical electric-field,leading to a decreased accumulation of carriers nearly the sensitive gate area.Results show under rated Vds and 15 V negative Vgs bias,the single event burnout(SEB)and sin-gle event gate rupture(SEGR)LET of radiation-hardened MOSFETs is above 75 MeV·cm2/mg.Under the same radiation condition,the negative gate-source bias of radiation-hardened MOSFETs reaches to 15～17 V.There is an obvious increase comparing to the un-hardened MOSFETs of 7～10 V.
陈宝忠;王晨杰;宋坤;王英民;刘存生;王小荷;赵辉;辛维平;杨丽侠;邢鸿雁
西安微电子技术研究所,西安 700048||抗辐射集成电路技术实验室,西安 700048
电子信息工程
功率MOSFET单粒子效应抗辐射加固单粒子烧毁单粒子栅穿
power MOSFETssingle event effectradiation-hardenedSEBSEGR
《集成电路与嵌入式系统》 2024 (003)
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