集成电路与嵌入式系统2024，Vol.24Issue(3)：19-22,4.
功率MOSFET抗单粒子加固技术研究
Investigation on radiation-hardened technology of single event effect for power MOSFETs
陈宝忠 1王晨杰 1宋坤 1王英民 1刘存生 1王小荷 1赵辉 1辛维平 1杨丽侠 1邢鸿雁1
作者信息
- 1. 西安微电子技术研究所,西安 700048||抗辐射集成电路技术实验室,西安 700048
- 折叠
摘要
Abstract
An investigation on radiation-hardened technology of single event effect(SEE)for power MOSFETs is described in the paper.In order to decrease the gain of the parasitic bipolar junction transistor(BJT),an optimized reversed-body implant process is utilized.Mean-while,a variable-doping buffer of epitaxy is designed to reduce the gradient of vertical electric-field,leading to a decreased accumulation of carriers nearly the sensitive gate area.Results show under rated Vds and 15 V negative Vgs bias,the single event burnout(SEB)and sin-gle event gate rupture(SEGR)LET of radiation-hardened MOSFETs is above 75 MeV·cm2/mg.Under the same radiation condition,the negative gate-source bias of radiation-hardened MOSFETs reaches to 15～17 V.There is an obvious increase comparing to the un-hardened MOSFETs of 7～10 V.关键词
功率MOSFET/单粒子效应/抗辐射加固/单粒子烧毁/单粒子栅穿Key words
power MOSFETs/single event effect/radiation-hardened/SEB/SEGR分类
信息技术与安全科学引用本文复制引用
陈宝忠,王晨杰,宋坤,王英民,刘存生,王小荷,赵辉,辛维平,杨丽侠,邢鸿雁..功率MOSFET抗单粒子加固技术研究[J].集成电路与嵌入式系统,2024,24(3):19-22,4.
