人工晶体学报2024，Vol.53Issue(3)：480-486,7.
氨热法GaN单晶生长的位错密度演变研究
Dislocation Density Evolution Study of GaN Single Crystal Growth by Ammonothermal Method
摘要
Abstract
Gallium nitride(GaN)single crystal has the characteristics of high breakdown voltage,direct band gap,high saturated electron drift rate,good chemical stability,etc.,and has been widely used in optoelectronic devices and high-power electronic devices.However,the heteroepitaxial of GaN produces a high dislocation density,which limits the performance of GaN devices.In this study,GaN single crystal was grown by ammonothermal method using HVPE-GaN as a seed crystal.The dislocation evolution from the seed crystal region to the lateral growth region of GaN single crystal was studied by scanning electron microscopy(SEM),optical microscopy and wet etching.The results show that the dislocation density of GaN single crystal in the lateral growth region is obviously lower than that in the seed crystal region,and the dislocation density decreases by 2 orders of magnitude when the lateral growth exceeds 25 μm.关键词
氮化镓单晶/氨热法/侧向生长/位错密度/腐蚀坑Key words
GaN single crystal/ammonothermal method/lateral growth/dislocation density/etch pit分类
数理科学引用本文复制引用
夏政辉,李腾坤,任国强,解凯贺,卢文浩,李韶哲,郑树楠,高晓冬,徐科..氨热法GaN单晶生长的位错密度演变研究[J].人工晶体学报,2024,53(3):480-486,7.基金项目
国家重点研发计划(2021YFB3602000,2022YFB3605202) （2021YFB3602000,2022YFB3605202）
国家自然科学基金(62074157,62104246) （62074157,62104246）
江苏省重点研发计划(BE2021008) （BE2021008）
