人工晶体学报2024，Vol.53Issue(3)：487-496,10.
8英寸半导电型GaAs单晶衬底的制备与性能表征
Fabrication and Characterization of 8 Inch Semiconducting GaAs Single Crystal Substrate
任殿胜 1王志珍 1张舒惠 1王元立1
作者信息
- 1. 北京通美晶体技术股份有限公司,北京 101113
- 折叠
摘要
Abstract
Si doped GaAs single crystal with diameter over 200 mm was prepared by vertical gradient freeze(VGF)method.The 8 inch GaAs single crystal substrate was obtained through multi-line cutting,edging,grinding,chemical mechanical polishing and wet cleaning.The crystal quality,dislocation density,electrical properties and surface quality of 8 inch GaAs substrate were characterized by X-ray diffraction,dislocation density inspection,Hall measurement,non-contact surface resistivity measurement,photoluminescence and wafer surface defect inspection.The results show that the full width of half maximum(FWHM)of substrate(400)diffraction peak is smaller than 0.009°,the average dislocation density is lower than 30 cm-2,the lowest dislocation density is 1.7 cm-2and 98.87％area are zero dislocation.Moreover,the standard deviation of surface resistivity and photoluminescence intensity are smaller than 6％and 4％,respectively.The number of the spot with light point defect(LPD)≥0.2 μm is less than 10.The results show that the 8 inch semiconducting GaAs single crystal substrate with excellent performance is developed and can be used as the high quality substrate for epitaxial growth and devices fabrication.关键词
GaAs/垂直梯度凝固/8英寸/单晶衬底/位错密度Key words
GaAs/vertical gradient freeze/8 inch/single crystal substrate/dislocation density分类
数理科学引用本文复制引用
任殿胜,王志珍,张舒惠,王元立..8英寸半导电型GaAs单晶衬底的制备与性能表征[J].人工晶体学报,2024,53(3):487-496,10.
