人工晶体学报2024，Vol.53Issue(3)：497-502,6.
13N超高纯锗单晶的制备与性能研究
Preparation and Properties of 13N Ultra-High Purity Germanium Single Crystals
摘要
Abstract
13N ultra-high purity germanium single crystal is the core material for producing ultra-high purity germanium detectors.This article obtains reduced germanium ingots by reduction method,then purifies them by horizontal zone refining method to obtain 12N high-purity germanium polycrystals,and finally grows 13N ultra-high purity germanium single crystals by Czochralski method.The performance of 13N ultra-high purity germanium single crystal was tested and studied through low-temperature Hall test,dislocation density test,and deep level transient spectroscopy(DLTS)detection.The low-temperature Hall results show that the average mobility of the crystal head cross-section is 4.515 × 104cm2·V-1·s-1,the carrier concentration is 1.176 × 101ocm-3,and the conductivity is p-type,the dislocation density at the crystal head is 2 256 cm-2.The average mobility of the tail section is 4.620 × 104cm2·V-1·s-1,the carrier concentration is 1.007 × 1010cm-3,and the conductivity type is p-type,the dislocation density at the tail of the crystal is 2 589 cm-2.The concentration of deep level impurities in the crystal is 1.843 x 109cm-3.The results indicate that the crystal is 13N ultra-high purity germanium single crystal.关键词
锗单晶/探测器/迁移率/载流子浓度/位错密度Key words
germanium single crystal/detector/mobility/carrier concentration/dislocation density分类
数理科学引用本文复制引用
顾小英,赵青松,牛晓东,狄聚青,张家瑛,肖溢,罗恺..13N超高纯锗单晶的制备与性能研究[J].人工晶体学报,2024,53(3):497-502,6.基金项目
国家重点研发计划(2021YFC2902805) （2021YFC2902805）
2022年核能开发科研项目(HNKF202224(28)) （HNKF202224(28）
