红外技术2024，Vol.46Issue(3)：233-245,13.
基于VLPE技术的碲镉汞p-on-n双层异质结材料与器件研究进展
Research Progress on Materials and Devices of HgCdTe p-on-n Double Layer Heterojunction Grown by VLPE
摘要
Abstract
This paper compares four different fabrication methods for mercury cadmium telluride(HgCdTe)p-on-n devices.Among these methods,vertical liquid-phase epitaxy(VLPE)stands out because of its unique advantages,particularly the high activation rate of in situ arsenic(As)dopants.VLPE is an essential approach for producing high-performance p-on-n double heterojunction devices.This paper reviews the research progress,both domestically and internationally,covering material growth,device processes,and performance.The discrepancies between domestic and foreign research are discussed,and the key challenges and technical bottlenecks hindering VLPE technology development are identified.Several solutions have been proposed to solve this problem.This study provides insights into the future trends of VLPE technology for p-on-n heterojunction devices,which hold significant promise in semiconductor devices.关键词
碲镉汞/p-on-n/台面异质结/富汞垂直液相外延(VLPE)Key words
HgCdTe/p-on-n/mesa heterojunction/VLPE分类
电子信息工程引用本文复制引用
王文金,孔金丞,起文斌,张阳,宋林伟,吴军,赵文,俞见云,覃钢..基于VLPE技术的碲镉汞p-on-n双层异质结材料与器件研究进展[J].红外技术,2024,46(3):233-245,13.基金项目
基础加强计划技术领域项目(2019-JCJQ-JJ527). （2019-JCJQ-JJ527）
