红外技术2024，Vol.46Issue(3)：342-346,5.
低能电子轰击引起氧化铝钝化膜BCMOS传感器暗电流变化研究
Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment
摘要
Abstract
This study designed a buried channel metal-oxide-semiconductor(BCMOS)image sensor experiment to address increased dark current caused by low-energy electron bombardment(300 eV to 1500 eV)on the alumina passivation layer.For a CMOS image sensor with a 10 nm alumina passivation layer,an increase in the dark current rate is obvious when the bombardment energy is greater than 600 eV.When the bombardment electron energy does not exceed 1.5 keV,the dark current has a maximum value of about 12000 e-/pixel/s.Finally,after electron bombardment,the dark current of the CMOS image sensor decreased exponentially when the sensor was placed in an electronic drying cabinet.The main reason for the above phenomenon is the increased defect states at the interface between alumina passivation layer and silicon caused by incident electrons.关键词
暗电流/电子轰击/背减薄CMOS/氧化铝钝化层Key words
dark current/electron bombardment/back-thinned CMOS/aluminum oxide passivation film分类
电子信息工程引用本文复制引用
闫磊,何惠洋,石峰,程宏昌,焦岗成,杨晔,肖超,樊海波,郑舟,董海晨..低能电子轰击引起氧化铝钝化膜BCMOS传感器暗电流变化研究[J].红外技术,2024,46(3):342-346,5.基金项目
微光夜视技术重点实验室基金项目(J20210104). （J20210104）
