四川大学学报（自然科学版）2024，Vol.61Issue(2)：127-135,9.DOI:10.19907/j.0490-6756.2024.024004
基于接触电阻的GFET高频等效噪声表征与建模
Characterization and modeling of high frequency equivalent noise in GFET based on contact resistance
摘要
Abstract
A small signal equivalent circuit model of Graphene Field Effect Transistors(GFET)is pro-posed,which takes into account the internal physical transmission phenomenon of metal-graphene interface,namely the contact resistance between drain and source.A method is proposed to separate the contact resis-tance from the intrinsic and parasitic parts of the equivalent circuit.The effective and accurate separation of the contact resistance can simulate its effects on the cut-off frequency fT and the maximum oscillation fre-quency fmax of the device.Based on the small signal equivalent circuit,the equivalent noise circuit model of GFET is proposed.Noise models include shot noise,thermal channel noise and thermal noise.Based on these noise models,the intrinsic noise correlation matrix is extracted by noise deembedding in the frequency range of 500 MHz～30 GHz.The minimum noise figure(NFmin)is used to obtain the contact resistance and the effect of different noise sources on the high frequency noise.Ultimately,after conducting a comprehensive rigorous validation and examination using both simulated and measured data,it has been demonstrated that the proposed model is capable of reliably and precisely capturing the small-signal and high-frequency noise characteristics of the device.It has been firmly established that neglecting the influence of contact resistance would be inappropriate,as it holds significant importance in the overall analysis.关键词
GFET/接触电阻/小信号模型/噪声模型/S参数/噪声参数Key words
GFET/Contact resistance/Small signal model/Noise model/S parameter/Noise parameter分类
信息技术与安全科学引用本文复制引用
李睿,王军..基于接触电阻的GFET高频等效噪声表征与建模[J].四川大学学报（自然科学版）,2024,61(2):127-135,9.基金项目
国家自然科学基金(69901003) （69901003）
四川省教育厅科研基金(18ZA0502) （18ZA0502）
