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Light-emitting devices based on atomically thin MoSe2

Xinyu Zhang Jingzhi Shang Xuewen Zhang Hanwei Hu Vanessa Li Zhang Weidong Xiao Guangchao Shi Jingyuan Qiao Nan Huang Ting Yu

半导体学报（英文版）2024，Vol.45Issue(4)：19-35,17.

半导体学报（英文版）2024，Vol.45Issue(4)：19-35,17.DOI:10.1088/1674-4926/45/4/041701

Light-emitting devices based on atomically thin MoSe2

Xinyu Zhang ¹Jingzhi Shang ¹Xuewen Zhang ¹Hanwei Hu ¹Vanessa Li Zhang ²Weidong Xiao ¹Guangchao Shi ¹Jingyuan Qiao ¹Nan Huang ¹Ting Yu³

作者信息

1. Institute of Flexible Electronics,Northwestern Polytechnical University,Xi'an 710129,China
2. School of Physics and Technology,Wuhan University,Wuhan 430072,China
3. School of Physics and Technology,Wuhan University,Wuhan 430072,China||Wuhan Institute of Quantum Technology,Wuhan 430206,China
折叠

摘要

关键词

MoSe2/light-matter interaction/exciton/polariton/light-emitting device

Key words

MoSe2/light-matter interaction/exciton/polariton/light-emitting device

引用本文复制引用

Xinyu Zhang,Jingzhi Shang,Xuewen Zhang,Hanwei Hu,Vanessa Li Zhang,Weidong Xiao,Guangchao Shi,Jingyuan Qiao,Nan Huang,Ting Yu..Light-emitting devices based on atomically thin MoSe2[J].半导体学报（英文版）,2024,45(4):19-35,17.

基金项目

This work is supported by the National Natural Science Foundation of China(No.61904151),the National Key Research and Development Program of China(No.2021YFA1200803),and the Joint Research Funds of the Depart-ment of Science&Technology of Shaanxi Province and North-western Polytechnical University(No.2020GXLH-Z-020). （No.61904151）

半导体学报（英文版）

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ISSN：1674-4926

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