首页|期刊导航|半导体学报（英文版）|Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

Fei Sun Yi Peng Guoqiang Zhao Xiancheng Wang Zheng Deng Changqing Jin

半导体学报（英文版）2024，Vol.45Issue(4)：36-41,6.

半导体学报（英文版）2024，Vol.45Issue(4)：36-41,6.DOI:10.1088/1674-4926/45/4/042101

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

Fei Sun ¹Yi Peng ²Guoqiang Zhao ³Xiancheng Wang ³Zheng Deng ²Changqing Jin²

作者信息

1. Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,China||Center for High Pressure Science and Technology Advanced Research,Beijing 100094,China
2. Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,China
3. Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
折叠

摘要

关键词

magnetic semiconductor/high-pressure/in-situ X-ray diffraction/phase transition

Key words

magnetic semiconductor/high-pressure/in-situ X-ray diffraction/phase transition

引用本文复制引用

Fei Sun,Yi Peng,Guoqiang Zhao,Xiancheng Wang,Zheng Deng,Changqing Jin..Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2[J].半导体学报（英文版）,2024,45(4):36-41,6.

基金项目

The work was supported by Beijing Natural Science Foun-dation(No.2212049),NSF of China(No.11974407),and CAS Project for Young Scientists in Basic Research(No.YSBR-030).Z.D.also acknowledges support of the Youth Innovation Pro-motion Association of CAS(No.2020007). （No.2212049）

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