Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2OA北大核心CSTPCDEI

作者：Fei Sun;Yi Peng;Guoqiang Zhao;Xiancheng Wang;Zheng Deng;Changqing Jin

作者单位：Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,China||Center for High Pressure Science and Technology Advanced Research,Beijing 100094,ChinaInstitute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,ChinaInstitute of Physics,Chinese Academy of Sciences,Beijing 100190,ChinaInstitute of Physics,Chinese Academy of Sciences,Beijing 100190,ChinaInstitute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,ChinaInstitute of Physics,Chinese Academy of Sciences,Beijing 100190,China||School of Physics,University of Chinese Academy of Sciences,Beijing 101408,China

中文关键词：magnetic semiconductorhigh-pressurein-situ X-ray diffractionphase transition

英文关键词：magnetic semiconductorhigh-pressurein-situ X-ray diffractionphase transition

刊名：《半导体学报（英文版）》 2024 (4)

页码/页数：36-41,6

基金：The work was supported by Beijing Natural Science Foun-dation(No.2212049),NSF of China(No.11974407),and CAS Project for Young Scientists in Basic Research(No.YSBR-030).Z.D.also acknowledges support of the Youth Innovation Pro-motion Association of CAS(No.2020007).

DOI：10.1088/1674-4926/45/4/042101