首页|期刊导航|半导体学报（英文版）|On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Peng Yuan Jinjuan Xiang Guilei Wang Chao Zhao Yuting Chen Liguo Chai Zhengying Jiao Qingjie Luan Yongqing Shen Ying Zhang Jibin Leng Xueli Ma

半导体学报（英文版）2024，Vol.45Issue(4)：42-47,6.

半导体学报（英文版）2024，Vol.45Issue(4)：42-47,6.DOI:10.1088/1674-4926/45/4/042301

On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Peng Yuan ¹Jinjuan Xiang ¹Guilei Wang ¹Chao Zhao ¹Yuting Chen ¹Liguo Chai ¹Zhengying Jiao ¹Qingjie Luan ¹Yongqing Shen ¹Ying Zhang ¹Jibin Leng ¹Xueli Ma¹

作者信息

1. Beijing Superstring Academy of Memory Technology,Beijing 100176,China
折叠

摘要

关键词

FeRAM/HZO/imprint/reliability

Key words

FeRAM/HZO/imprint/reliability

引用本文复制引用

Peng Yuan,Jinjuan Xiang,Guilei Wang,Chao Zhao,Yuting Chen,Liguo Chai,Zhengying Jiao,Qingjie Luan,Yongqing Shen,Ying Zhang,Jibin Leng,Xueli Ma..On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J].半导体学报（英文版）,2024,45(4):42-47,6.

基金项目

This research was supported by the National Key R&D Pro-gram of China(Grant No.2022YFB3606900),and in part by the National Natural Science of China(Grant No.62004217). （Grant No.2022YFB3606900）

半导体学报（英文版）

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ISSN：1674-4926

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