On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memoryOA北大核心CSTPCDEI
On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory
The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO2.In this work,we present results of a comprehensive reliability evaluation of Hf0.5Zr0.5O2-based ferroelectric random access memory.The influence of imprint on the retention and endurance is demonstrated.Furthermore,a solution in circuity is pro-posed to effectively solve the misreading problem caused by imprint.
Peng Yuan;Jinjuan Xiang;Guilei Wang;Chao Zhao;Yuting Chen;Liguo Chai;Zhengying Jiao;Qingjie Luan;Yongqing Shen;Ying Zhang;Jibin Leng;Xueli Ma
Beijing Superstring Academy of Memory Technology,Beijing 100176,China
FeRAMHZOimprintreliability
《半导体学报（英文版）》 2024 (004)
42-47 / 6
This research was supported by the National Key R&D Pro-gram of China(Grant No.2022YFB3606900),and in part by the National Natural Science of China(Grant No.62004217).
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