首页|期刊导航|半导体学报（英文版）|Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes
半导体学报（英文版）2024，Vol.45Issue(4)：48-55,8.DOI:10.1088/1674-4926/45/4/042501
Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes
Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes
摘要
关键词
nitrogen polarity/GaN/Schottky barrier diodes/annealing/interface stateKey words
nitrogen polarity/GaN/Schottky barrier diodes/annealing/interface state引用本文复制引用
Nuo Xu,Gaoqiang Deng,Haotian Ma,Shixu Yang,Yunfei Niu,Jiaqi Yu,Yusen Wang,Jingkai Zhao,Yuantao Zhang..Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes[J].半导体学报（英文版）,2024,45(4):48-55,8.基金项目
This work was supported by the National Key R&D Pro-gram of China(Nos.2022YFB3605205,2021YFB3601000,and 2021YFB3601002),the National Natural Science Foundation of China(Nos.U22A20134,62074069,62104078,and 62104079),and the Science and Technology Developing Project of Jilin Province(Nos.20220201065GX,20230101053JC,and 20220101119JC). （Nos.2022YFB3605205,2021YFB3601000,and 2021YFB3601002）
