Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodesOA北大核心CSTPCDEI
Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes
Nuo Xu;Gaoqiang Deng;Haotian Ma;Shixu Yang;Yunfei Niu;Jiaqi Yu;Yusen Wang;Jingkai Zhao;Yuantao Zhang
State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,ChinaState Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China
nitrogen polarityGaNSchottky barrier diodesannealinginterface state
nitrogen polarityGaNSchottky barrier diodesannealinginterface state
《半导体学报（英文版）》 2024 (4)
48-55,8
This work was supported by the National Key R&D Pro-gram of China(Nos.2022YFB3605205,2021YFB3601000,and 2021YFB3601002),the National Natural Science Foundation of China(Nos.U22A20134,62074069,62104078,and 62104079),and the Science and Technology Developing Project of Jilin Province(Nos.20220201065GX,20230101053JC,and 20220101119JC).
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