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Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction

Xueqiang Ji Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi

半导体学报（英文版）2024，Vol.45Issue(4)：64-69,6.

半导体学报（英文版）2024，Vol.45Issue(4)：64-69,6.DOI:10.1088/1674-4926/45/4/042503

Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction

Xueqiang Ji ¹Shan Li ²Zeng Liu ²Lei Shu ³Weihua Tang ²Peigang Li ¹Jinjin Wang ¹Song Qi ¹Yijie Liang ¹Shengrun Hu ¹Haochen Zheng ¹Sai Zhang ¹Jianying Yue ¹Xiaohui Qi¹

作者信息

1. School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China
2. College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
3. Beijing Microelectronics Technology Institute,Beijing 100076,China
折叠

摘要

关键词

Ga2O3/Schottky barrier diode/NiO/Ga2O3 heterojunction

Key words

Ga2O3/Schottky barrier diode/NiO/Ga2O3 heterojunction

引用本文复制引用

Xueqiang Ji,Shan Li,Zeng Liu,Lei Shu,Weihua Tang,Peigang Li,Jinjin Wang,Song Qi,Yijie Liang,Shengrun Hu,Haochen Zheng,Sai Zhang,Jianying Yue,Xiaohui Qi..Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction[J].半导体学报（英文版）,2024,45(4):64-69,6.

基金项目

This work was supported by BUPT Excellent Ph.D.Stu-dents Foundation(CX2023301)and in part by the National Nat-ural Science Foundation of China(62204019).The authors thank Beijing GAO Semiconductor Co.Ltd.for providing Ga2O3 single crystal substrates and epitaxial wafers utilized in this research project. （CX2023301）

半导体学报（英文版）

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ISSN：1674-4926

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