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Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Rui Huang Zhiyong Wang Kai Wu Hao Xu Qing Wang Yecai Guo

半导体学报（英文版）2024，Vol.45Issue(4)：70-76,7.

半导体学报（英文版）2024，Vol.45Issue(4)：70-76,7.DOI:10.1088/1674-4926/45/4/042701

Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Rui Huang ¹Zhiyong Wang ²Kai Wu ¹Hao Xu ¹Qing Wang ¹Yecai Guo¹

作者信息

1. School of Electronic and Information Engineering,Wuxi University,Wuxi 214105,China
2. Institute of Advanced Technology on Semiconductor Optics&Electronics,Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China
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摘要

关键词

plasma-activated bonding/bonding strength/thermal stress model/mutual diffusion

Key words

plasma-activated bonding/bonding strength/thermal stress model/mutual diffusion

引用本文复制引用

Rui Huang,Zhiyong Wang,Kai Wu,Hao Xu,Qing Wang,Yecai Guo..Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation[J].半导体学报（英文版）,2024,45(4):70-76,7.

基金项目

This work was financially supported by the National Nature Science Foundation of China(Grant No.61673222),the Natural Science Foundation of the Jiangsu Higher Educa-tion Institutions of China(Grant No.23KJB430036),and Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r036). （Grant No.61673222）

半导体学报（英文版）

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ISSN：1674-4926

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