基于金属电化学腐蚀的单晶SiC表面腐蚀和磨损性能研究OA北大核心CSTPCD

Aiming at the environmental pollution of the polishing solution in chemical mechanical polishing,a single-crystal SiC chemical mechanical polishing method based on metal electrochemical corrosion is proposed.The Si surface of single-crystal SiC corrosion performance and wear performance of electrochemically corroded were investigated by corrosion experiments and wear experiments.By comparing the corrosion performance of Al,Cu,and Fe metals on the Si face in a Na2SO4 electrolyte solution,it was found that only Al can generate a noticeable corrosion layer.The EDS and XPS analyses of the Si face confirmed that the corrosion is due to the formation of the SiO2 layer.Frictional wear experiments were conducted to investigate the influence of solution composition on the wear behavior of Si face.Increasing the concentration of the Na2SO4 electrolyte solution resulted in higher wear,with a maximum wear value of 7.19 µm2 obtained in 1.00 mol/L Na2SO4 electrolyte solution.In an acidic corrosive solution,the Si face exhibited the highest material removal,with a wear value of 11.97 µm2 achieved at pH=3.The material removal mechanism of single-crystal SiC via metal electrochemical corrosion involved the corrosive reaction involving Al at the cathode,which generated a corrosion current,and the subsequent oxidation of the SiC surface at the anode,thereby forming a SiO2 oxide layer leading to material removal.