湖南大学学报（自然科学版）2024，Vol.51Issue(4)：140-152,13.DOI:10.16339/j.cnki.hdxbzkb.2024180
碳化硅衬底磨抛加工技术的研究进展与发展趋势
Grinding and Polishing Technology for Silicon Carbide Substrate:State-of-the-art and Prospective
摘要
Abstract
The material characteristics of silicon carbide substrate,which are difficult to machine,coupled with its amplification effect of large-sized and ultra-thinned,pose a huge challenge to existing processing technologies.Consequently,the processing technology of high efficiency and high quality for silicon carbide substrate has become a current research focus.In this paper,the research progress of mechanical and chemical grinding and polishing technology for silicon carbide substrates is reviewed.The characteristics of various grinding and polishing technologies are compared.The challenge and development trend of grinding and polishing technologies of silicon carbide substrate is pointed out to provide new ideas and methods for high quality,high efficiency,and low-cost processing of large-size silicon carbide substrate.关键词
碳化硅/表面粗糙度/机械磨抛技术/化学反应磨抛技术/多能场辅助磨抛技术Key words
silicon carbide/surface roughness/mechanical grinding and polishing technology/chemical reac-tion grinding and polishing technology/multi-energy field assisted grinding and polishing technology分类
矿业与冶金引用本文复制引用
罗求发,陈杰铭,程志豪,陆静..碳化硅衬底磨抛加工技术的研究进展与发展趋势[J].湖南大学学报（自然科学版）,2024,51(4):140-152,13.基金项目
国家自然科学基金资助项目(52005190),National Natural Science Foundation of China(52005190) （52005190）
福建省自然科学基金资助项目(2021J05060),Natural Science Foundation of Fujian Province(2021J05060) （2021J05060）
中央高校基本科研业务费专项资金资助项目(ZQN-1022),Fundamental Research Funds for the Central Universities(ZQN-1022) （ZQN-1022）
国家自然科学基金联合基金重点资助项目(U22A20198),Key Proj-ects of the National Natural Science Foundation Joint Fund(U22A20198) （U22A20198）
