不同结构及新型材料在硅基光电探测器上的应用展望OA北大核心CSTPCD

Silicon based photodetector is the core device in silicon photonic integrated circuit,which plays a key role in efficient target detection and accurate target tracking in missile guidance system.This paper summarizes the re-search progress and application prospects of silicon based photodetector at home and abroad,and discusses the impact of different structures and materials on the detector performance.By reviewing relevant literatures and analyzing re-search results,it emphasis on the application of PIN structures,Schottky structures,GeSn materials,and two-dimen-sional materials in silicon-based photodetectors.With further research,the response speed and sensitivity of silicon-based photodetectors have been significantly improved,and the detection demand for a wide range from ultraviolet to in-frared has been achieved to improve the responsiveness of silicon based photodetectors,shorten the response time and reduce the dark current,also explore new structures and materials to further expand the application range of silicon-based photodetectors in infrared imaging and optical communication systems.