辽宁大学学报（自然科学版）2024，Vol.51Issue(1)：24-32,9.
MOS器件Hf基高k栅介质的研究综述
Review of Hf-Based High-k Gate Dielectric for MOS Devices
吕品 1白永臣 2邱巍1
作者信息
- 1. 辽宁大学 物理学院,辽宁 沈阳 110036
- 2. 辽宁大学 创新创业学院,辽宁 沈阳 110036
- 折叠
摘要
Abstract
As the size of metal oxide semiconductor(MOS)devices continues to shrink,HfO2 has become the most promising candidate material to replace traditional SiO2 gate dielectrics due to its high dielectric constant(k)and large band gap.This paper reviews the recent development of Hf-based high-k gate dielectric films.Aiming at the problems of low HfO2 crystallization temperature and the formation of interfacial layer between HfO2 thin film and Si substrate,resulting in large leakage current,high density of interface states,and low breakdown voltage,we reviewed two strategies reported in recent papers,namely,doping modification and inserting buffer layer.Then,the evolution of Hf-based materials from binary to doped oxide/complex,depositing Hf-based high-k gate dielectric on non-Si substrate and non-conventional MOS device architectures with Hf-based high-k gate dielectric are discussed using the specific examples,which can provide some ideas for the long-term development of MOS devices in integrated circuit(IC).关键词
Hf基高k材料/栅介质/MOS器件/介电常数Key words
Hf-based high-k materials/gate dielectric/MOS device/dielectric constant分类
信息技术与安全科学引用本文复制引用
吕品,白永臣,邱巍..MOS器件Hf基高k栅介质的研究综述[J].辽宁大学学报（自然科学版）,2024,51(1):24-32,9.
