有色金属材料与工程2024，Vol.45Issue(2)：46-54,9.DOI:10.13258/j.cnki.nmme.20220322002
GaN基高电子迁移率晶体管器件的可靠性及退化机制研究进展
Research progress on reliability and degradation mechanisms of GaN-based high electron mobility transistor devices
摘要
Abstract
GaN-based high electron mobility transistor(HEMT)devices have been widely used in aerospace,communications,radar,electric vehicles and other fields,and have become a research hotspot in power electronic devices in recent years.In practical applications,GaN-based HEMT devices may suffer from degradations or even failures,and the reliability is still a stumbling block for further development.Therefore,it is critical to study the reliability and degradation mechanisms of the devices for further optimizing their performances.In this paper,several key factors which affect reliability of the devices,such as high field stress,high temperature storage,high temperature and high field,and heavy ion irradiation are described,and several failure mechanisms and corresponding failure phenomena are summarized.Finally,measures to further optimize the reliability of the devices are discussed,which can promote the applications of HEMT devices.关键词
GaN/高电子迁移率晶体管/可靠性/退化Key words
GaN/high electron mobility transistor/reliability/degradation分类
电子信息工程引用本文复制引用
黄玲钰,修慧欣..GaN基高电子迁移率晶体管器件的可靠性及退化机制研究进展[J].有色金属材料与工程,2024,45(2):46-54,9.基金项目
宽禁带半导体材料教育部重点实验室开放基金项目(Kdxkf2019-03) （Kdxkf2019-03）
