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遮荫与施硅对圆柏幼苗光合特性和生长的影响OA

Effects of Shading and Silicon Application on Photosynthetic Characteristics and Growth of Juniperuschi-nensis Seedlings

中文摘要英文摘要

为探究圆柏幼苗对弱光环境的响应机制和施硅对遮荫不利影响的缓解作用,以 5 年生圆柏幼苗为材料,设置 4 个遮荫梯度和 2 种施硅处理,研究遮荫与施硅对圆柏幼苗光合特性和生长的影响.结果表明:遮荫处理显著提高了圆柏幼苗的株高,并降低了茎粗和一级侧枝长度,与无遮荫相比,株高生长量最高增加了 54.1%,而茎粗增长量、出叶强度和一级侧枝长度最高降低了65.6%、19.3%和 14.8%.株高与茎粗存在显著负相关,说明遮荫处理促进圆柏幼苗的垂直生长,但减少了基茎增粗、叶片和侧枝的生长,符合避荫综合症的形态特征.轻度和中度遮荫处理显著提高了净光合速率、总叶绿素和叶片硅含量,较无遮荫处理分别最高增加了 118.3%、29.9%和 62.7%,同时降低气孔导度和蒸腾速率,较无遮荫分别最高降低了 44.8%和 10.7%,表现出耐荫性提高.而高度遮荫处理的圆柏幼苗净光合速率较无遮荫处理降低了 36.0%,气孔导度和蒸腾速率分别提高了 6.3%和 38.8%,且净光合速率与气孔导度和蒸腾速率存在显著负相关,表现出光合抑制现象.在遮荫条件下,施硅提高了圆柏幼苗的光合能力,降低了气孔导度和蒸腾速率,与不施硅相比,净光合速率最高增加了 22.5%,气孔导度和蒸腾速率最高减少了 48.8%和 37.9%,有利于光合产物的积累.茎粗、一级侧枝长度和出叶强度较不施硅处理分别最高增加了 143.7%、17.6%和 33.1%,减轻了避荫综合症.因此,施硅有利于缓解圆柏幼苗的避荫综合症.

To investigate how Juniperuschinensis seedlings respond and adapt to shading and to assess the mitigation effects of silicon application on shading stress,we studied the photosynthetic characteristics and growth of 5-year-old seedlings under four levels of shading and two silicon treatments.The results revealed that shading significantly increased the seedlings height while reducing the growth of basal diameter and first-order lateral branches.The height increased by up to 54.1%,whereas the growth in basal diameter,leafing intensity and first-order lateral branch length was reduced by as much as 65.6%,19.3%and 14.8%,respectively,under shad-ing.A significant negative correlation was observed between plant height and stem diameter,indicating that shading promoted vertical growth at the expense of radial growth and leaf and lateral branch development,aligning with the typical features of Shade Avoidance Syndrome.Under mild and moderate shading,there was an increase in net photosynthetic rate,total Chlorophyll,and leaf silicon con-tent,by as much as 118.3%,29.9%,and 62.7%,respectively.In contrast,stomatal conductance and transpiration rate decreased by up to 44.8%and 10.7%,improving shade tolerance.However,under heavy shading,the net photosynthetic rate fell by 36.0%,with stomatal conductance and transpiration rate increasing by 6.3%and 38.8%,respectively,indicating photosynthetic inhibition.Silicon application under shading conditions enhanced the net photosynthetic rate of the seedlings by up to 22.5%,reduced stomatal conduc-tance and transpiration rate by as much as 48.8%and 37.9%,respectively,thereby facilitating the accumulation of photosynthetic products.Additionally,the growth in basal diameter,first-order lateral branch length,and leafing intensity increased by as much as 143.7%,17.6%,and 33.1%,respectively,mitigating the effects of shade avoidance syndrome.Thus,silicon application alleviates the shade avoidance syndrome in Juniperuschinensis seedlings.

王梦翔;卢晶晶;张妞;陈春艳;张有福

河南科技大学 农学院,河南 洛阳 471000

生物学

遮荫避荫综合症圆柏

shadesiliconshade avoidance syndromeJuniperuschinensis

《天津农业科学》 2024 (003)

21-29 / 9

国家自然科学基金(31870380)

10.3969/j.issn.1006-6500.2024.03.004

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