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一种新型可调驱动电压的SiC/Si混合开关驱动电路

付永升 任海鹏

中国电机工程学报2024,Vol.44Issue(7):2774-2785,后插21,13.
中国电机工程学报2024,Vol.44Issue(7):2774-2785,后插21,13.DOI:10.13334/j.0258-8013.pcsee.230225

一种新型可调驱动电压的SiC/Si混合开关驱动电路

Novel SiC/Si Hybrid Switch Drive Circuit With Adjustable Driving Voltage

付永升 1任海鹏2

作者信息

  • 1. 西安工业大学电子信息工程学院,陕西省 西安市 710021
  • 2. 西安工业大学机械工程学院,陕西省 西安市 710021
  • 折叠

摘要

Abstract

To improve the applicability and reliability of the hybrid switch realized by silicon carbide metal oxide semiconductor filed effect transistor(SiC-MOSFET)and silicon insulated gate bipolar transistor(Si-IGBT)in parallel connection(SiC/Si HyS),this paper proposes a SiC/Si hybrid switch drive circuit with variable drive voltage for the first time.It utilizes one PWM control signal and one driver chip to generate gate signals with different voltage levels to control SiC-MOSFET and Si-IGBT,respectively.Compared with the traditional SiC/Si HyS gate driver circuit with dual independent drive branch,the proposed drive circuit greatly reduces the complexity of SiC/Si HyS gate drive circuit design,while it reduces the possibility of Si-IGBT misdirection during SiC-MOSFET turning off,improving the reliability of hybrid switching.The working principle of the designed driving circuit is analyzed in detail,and the gate voltage adjustment is given.The mathematical model of the voltage ripple and the transient process of the coupling capacitor are established during system startups,and the accuracy is verified by both simulation and experiment.A 2 kW SiC/Si hybrid switch Buck converter is built based on the proposed drive circuit to verify the reliability of the system.The advantages of the proposed drive circuit are analyzed by comparison with the existing methods in terms of power losses of the SiC/Si power switches,power loss of the drive circuit,system cost and volume.

关键词

宽禁带半导体器件/碳化硅金属氧化物半导体场效应晶体管/硅基绝缘栅极双极晶体管/混合开关/门极驱动电路/耦合电容

Key words

wide bandgap semiconductor device/silicon carbide metal oxide semiconductor filed effect transistor(SiC-MOSFET)/silicon insulated gate bipolar transistor(Si-IGBT)/hybrid switch/gate driver circuit/coupling capacitor

分类

信息技术与安全科学

引用本文复制引用

付永升,任海鹏..一种新型可调驱动电压的SiC/Si混合开关驱动电路[J].中国电机工程学报,2024,44(7):2774-2785,后插21,13.

基金项目

陕西省科技厅自然科学基础研究(2022JQ-424) (2022JQ-424)

西安工业大学优秀博士论文培育基金项目(YB202203).Natural Science Basic Research of Shaanxi Provincial Department of Science and Technology(2022JQ-424) (YB202203)

Excellent Doctoral Dissertation of Xi'an Technological University(YB202203). (YB202203)

中国电机工程学报

OA北大核心CSTPCD

0258-8013

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