东华大学学报（英文版）2024，Vol.41Issue(2)：130-136,7.DOI:10.19884/j.1672-5220.202310006
氧等离子处理的二硫化钼场效应晶体管表面掺杂和湿度传感研究
Surface Doping and Humidity Sensing of MoS2 Field-Effect Transistor by Oxygen Plasma Treatment
摘要
Abstract
Two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)have unique electrical,optical and mechanical properties,and hold great potential for diverse applications such as digital circuits,light harvesting and energy storage.Controlling the electrical properties of TMDs through doping provides an effective approach for sensitive sensing.This paper presents the experimental study of the doping effect of oxygen plasma on molybdenum disulfide(MoS2).Firstly,the transport characteristics of the MoS2 field-effect transistor(FET)were investigated and the MoS2 FET exhibited p-type doping through plasma treatment.Then,the cause of the doping effect was further studied,and the doping effect was attributed to the formation of MoO3-like defects on the surface of the channel,confirmed by Raman spectroscopy.Finally,the humidity-sensing behavior of the plasma-treated MoS2 FET was studied.The MoS2 FET exhibited high sensitivity to humidity because of the increased adsorption centers for water molecules,with the source-drain current change of approximately 54%in humid environment.The work would provide a simple method to modify the electrical properties of TMDs and show potential for low-dimensional chemical sensors.关键词
场效应晶体管(FET)/二硫化钼(MoS2)/氧等离子体/表面掺杂/湿度传感Key words
field-effect transistor(FET)/molybdenum disulfide(MoS2)/oxygen plasma/surface doping/humidity sensing分类
物理学引用本文复制引用
江海洋,吴静远,温朝阳,郭冰博..氧等离子处理的二硫化钼场效应晶体管表面掺杂和湿度传感研究[J].东华大学学报（英文版）,2024,41(2):130-136,7.基金项目
National Natural Science Foundation of China(No.62005042) （No.62005042）
