一种紧凑的射频CMOS放大器LC输出匹配电路OA北大核心CSTPCD
A Compact RF CMOS Amplifier LC Output Matching Circuit
提出了一种紧凑的射频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)放大器LC输出匹配电路,利用放大器漏极偏置电感、输出端隔直电容与放大器输出端并联电感电容形成高阶LC谐振网络,可在占用较小芯片面积的条件下实现较传统L型匹配电路更宽频率范围的输出阻抗匹配.推导了该LC输出匹配电路元件值的计算式,并根据提出的设计方法,采用 65 nm CMOS工艺设计了一款K频段放大器,其输出匹配电路尺寸仅98 μm×150 μm.仿真结果表明,在16.5～22.1 GHz频率范围内放大器的S22<-10 dB,阻抗匹配带宽相比L型匹配电路增加166%.放大器实测S参数和仿真结果相符,验证了该LC匹配电路可实现紧凑的宽带阻抗匹配.
A compact radio frequency(RF)complementary metal oxide semiconductor(CMOS)amplifier LC output matching circuit is proposed.A high-order LC resonant network is formed by using the drain bias inductor,the output DC block capacitor,and the output parallel LC of the amplifier.It can achieve output impedance matching in a wider frequency range than traditional L-type matching circuit under the condition of occupying a small chip area.The formula for calculating the component values of the LC output matching circuit is deduced,and according to the proposed design method,a K-band amplifier is designed with a 65 nm CMOS process,and its output matching circuit size is only 98 μm×150 μm.The simulation results show that S22 of the amplifier is less than-10 dB in 16.5～22.1 GHz,and the impedance matching bandwidth is increased by 166%compared with that of the L-type matching circuit.The measured S-parameters of the amplifier are consistent with the simulation ones,which verifies that the LC matching circuit can achieve compact broadband impedance matching.
赵晓冬
中国西南电子技术研究所,成都 610036
电子信息工程
紧凑匹配电路射频CMOS放大器宽带阻抗匹配LC谐振网络
compact matching circuitRF CMOS amplifierbroadband impedance matchingLC resonant network
《电讯技术》 2024 (004)
637-642 / 6
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