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一种紧凑的射频CMOS放大器LC输出匹配电路

赵晓冬

电讯技术2024,Vol.64Issue(4):637-642,6.
电讯技术2024,Vol.64Issue(4):637-642,6.DOI:10.20079/j.issn.1001-893x.230221002

一种紧凑的射频CMOS放大器LC输出匹配电路

A Compact RF CMOS Amplifier LC Output Matching Circuit

赵晓冬1

作者信息

  • 1. 中国西南电子技术研究所,成都 610036
  • 折叠

摘要

Abstract

A compact radio frequency(RF)complementary metal oxide semiconductor(CMOS)amplifier LC output matching circuit is proposed.A high-order LC resonant network is formed by using the drain bias inductor,the output DC block capacitor,and the output parallel LC of the amplifier.It can achieve output impedance matching in a wider frequency range than traditional L-type matching circuit under the condition of occupying a small chip area.The formula for calculating the component values of the LC output matching circuit is deduced,and according to the proposed design method,a K-band amplifier is designed with a 65 nm CMOS process,and its output matching circuit size is only 98 μm×150 μm.The simulation results show that S22 of the amplifier is less than-10 dB in 16.5~22.1 GHz,and the impedance matching bandwidth is increased by 166%compared with that of the L-type matching circuit.The measured S-parameters of the amplifier are consistent with the simulation ones,which verifies that the LC matching circuit can achieve compact broadband impedance matching.

关键词

紧凑匹配电路/射频CMOS放大器/宽带阻抗匹配/LC谐振网络

Key words

compact matching circuit/RF CMOS amplifier/broadband impedance matching/LC resonant network

分类

信息技术与安全科学

引用本文复制引用

赵晓冬..一种紧凑的射频CMOS放大器LC输出匹配电路[J].电讯技术,2024,64(4):637-642,6.

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