电源学报2024，Vol.22Issue(2)：386-395,10.DOI:10.13234/j.issn.2095-2805.2024.2.386
SiC MOSFET器件高温下最大电流导通能力评估方法
Evaluation Method for Maximum Current Conduction Capability of SiC MOSFET Device at High Temperature
摘要
Abstract
The silicon carbide(SiC)device is considered as a semiconductor device with high temperature resistance,and a careful study on its loss and heat dissipation is required when it is applied to high-power-density and high-tem-perature scenarios.The maximum current conduction capability of SiC MOSFET power module at high temperature is stud-ied,and the relationship between electrical performance and heat dissipation is taken into account.Based on an electro-thermal coupling model of SiC MOSFET device and a heat dissipation model of the cooling system,the mechanism of thermal runaway process is analyzed.A co-simulation is conducted to determine the current conduction capability of one SiC power module at high temperature,and the simulation error with respect to the experimental result is about 4％,which verifies the effectiveness of the proposed method.关键词
冷却/结温/封装/功率模块/碳化硅/热失控Key words
Cooling/junction temperature/packaging/power module/silicon carbide(SiC)/thermal runaway分类
信息技术与安全科学引用本文复制引用
李华康,宁圃奇,康玉慧,曹瀚,郑丹..SiC MOSFET器件高温下最大电流导通能力评估方法[J].电源学报,2024,22(2):386-395,10.基金项目
中国科学院青年创新促进会资助项目(2022135)This work is supported by Youth Innovation Promotion Associa-tion of Chinese Academy of Sciences under the grant 2022135 （2022135）
