Li(Sc,M)Si2O6∶Cr3+(M=Ga3+/Lu3+/Y3+/Gd3+)的近红外发光性能OA北大核心CSTPCD
Near-infrared Luminescence of Li(Sc,M)Si2 O6∶Cr3+(M = Ga3+/Lu3+/Y3+/Gd3+)
荧光转换型近红外发光二极管(NIR pc-LED)具有体积小、谱带宽、峰位易调谐等优点,是新一代NIR光源发展的前沿,其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉.LiScSi2O6∶Cr3+荧光材料的激发波长为460 nm,发射峰位在845 nm,光谱带宽为156 nm,内量子效率为64.4%.基于该体系,本文通过M离子(M = Ga3+,Lu3+,Y3+,Gd3+)取代Sc3+的方式对其性能进行调控.结果表明,引入M离子易生成杂相或发生相变,降低了材料的发光性能.本文从晶体结构出发对其调控过程进行了分析.
Near-infrared phosphor-converted light-emitting diodes(NIR pc-LEDs)are expected to be the next-gen-eration NIR light sources,which have the advantages of small size,broad bandwidth,and easy tuning of emission peaks.The key for NIR pc-LEDs is to develop highly efficient broadband NIR phosphors that can be effectively excit-ed by blue light.LiScSi2O6∶Cr3+can be excited by blue light and emits NIR light peaked at 845 nm with a broad band-width of 156 nm and an internal quantum efficiency of 64.4%.Herein,Sc3+ is replaced by M ions(M = Ga3+,Lu3+,Y3+,Gd3+)to regulate the NIR luminescence.The introduction of M ions is easy to form heterogeneous phases or un-dergo phase transformation,thus reducing the NIR luminescence of the titled material.The regulation processes are analyzed based on the crystal structure.
卢紫微;刘永福;罗朝华;孙鹏;蒋俊
宁波大学 材料科学与化学工程学院,浙江 宁波 315211||中国科学院 宁波材料技术与工程研究所,浙江 宁波 315201中国科学院 宁波材料技术与工程研究所,浙江 宁波 315201
物理学
LiScSi2O6∶Cr3+阳离子取代晶体结构
LiScSi2O6∶Cr3+cation substitutioncrystal structure
《发光学报》 2024 (003)
宽带近红外LED用Ca3Sc2Si3O12:Cr3+组分设计和发光性能调控机理研究
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国家自然科学基金(12074393);浙江省"尖兵""领雁"计划(2022C01046);中国科学院青年创新促进会(2021295)Supported by National Natural Science Foundation of China(12074393);"Pioneer"and"Leading Goose"R&D Program of Zhejiang(2022C01046);Youth Innovation Promotion Association Chinese Academy of Sciences(2021295)
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