β-Ga2O3的p型掺杂研究进展OA北大核心CSTPCD

β-Ga2O3 has many advantages such as wide bandgap,high breakdown field strength,and high Baliga's figure of merit,making it an emerging semiconductor material with great potential for high-power electronic devices,gas sensors,and solar-blind ultraviolet detectors.However,the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga2O3.Firstly,the advantages of β-Ga2O3 have been outlined briefly,and its struc-ture and basic properties have been introduced as well.Secondly,the effect of the intrinsic defects of β-Ga2O3 on electrical conductivity has been discussed detailed,especially,for the oxygen vacancy.And then,the current re-search status of p-type doping in β-Ga2O3 has been discussed including N,Mg,Zn and other acceptor elements dop-ing,co-doping with two elements and other methods.Additionally,the reasons for difficulty in p-type doping have been presented.Finally,this review discussed and looked forward to future developments for β-Ga2O3.