发光学报2024，Vol.45Issue(4)：557-567,11.DOI:10.37188/CJL.20230328
β-Ga2O3的p型掺杂研究进展
Research Progress of p-type Doping of β-Ga2 O3
摘要
Abstract
β-Ga2O3 has many advantages such as wide bandgap,high breakdown field strength,and high Baliga's figure of merit,making it an emerging semiconductor material with great potential for high-power electronic devices,gas sensors,and solar-blind ultraviolet detectors.However,the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga2O3.Firstly,the advantages of β-Ga2O3 have been outlined briefly,and its struc-ture and basic properties have been introduced as well.Secondly,the effect of the intrinsic defects of β-Ga2O3 on electrical conductivity has been discussed detailed,especially,for the oxygen vacancy.And then,the current re-search status of p-type doping in β-Ga2O3 has been discussed including N,Mg,Zn and other acceptor elements dop-ing,co-doping with two elements and other methods.Additionally,the reasons for difficulty in p-type doping have been presented.Finally,this review discussed and looked forward to future developments for β-Ga2O3.关键词
β-Ga2O3/本征缺陷/p型掺杂/宽禁带半导体/半导体Key words
β-Ga2O3/intrinsic defects/p-type doping/wide bandgap semiconductors/semiconductors分类
数理科学引用本文复制引用
何俊洁,矫淑杰,聂伊尹,高世勇,王东博,王金忠..β-Ga2O3的p型掺杂研究进展[J].发光学报,2024,45(4):557-567,11.基金项目
国家自然科学基金(62174042) （62174042）
国家重点研发项目(2019YFA0705201)Supported by National Natural Science Foundation of China(62174042) （2019YFA0705201）
National Key R&D Program of China(2019YFA0705201) （2019YFA0705201）
