发光学报2024，Vol.45Issue(4)：603-612,10.DOI:10.37188/CJL.20230330
蓝宝石/石墨烯衬底上蓝光LED外延生长及光电性能
Improvement of Blue Light LED Epitaxy Grown on Sapphire/Graphene Substrate
摘要
Abstract
In this article,we investigate the method of growing LED(Light emitting diodes)epitaxy on sapphire/graphene substrates and its impact on improving optoelectronic performance.The research results indicate that sap-phire/graphene samples have a smaller FWHM(Full width half maximum)compared to traditional sapphire samples,indicating that sapphire/graphene substrates have a lower dislocation density.And in Raman testing,it was shown that the sapphire/graphene sample was subjected to less compressive stress than traditional samples.In the elemental analysis,it was shown that the growth of the active region quantum well was good,and In and Ga elements were uni-formly distributed in the quantum well without any mutual diffusion.The photoelectric performance test of the sample shows that the LOP(Light output power)of the sapphire/graphene sample is higher than that of the traditional sam-ple,both at working current and saturation current,and the efficiency is improved compared to the traditional sam-ple.In the variable temperature test,sapphire/graphene samples also showed lower thermal resistance,lower junc-tion temperature,and smaller wavelength shift.In summary,samples grown by epitaxial growth on sapphire/gra-phene substrates have significantly improved the optoelectronic and heat dissipation performance of the device.关键词
蓝宝石/石墨烯/晶体质量/效率下降/散热性能Key words
sapphire/grapheme/crystal quality/efficiency drop/thermal characteristics分类
信息技术与安全科学引用本文复制引用
林易展,熊飞兵,李森林,董雪振,高默然,丘金金,周凯旋,李明明..蓝宝石/石墨烯衬底上蓝光LED外延生长及光电性能[J].发光学报,2024,45(4):603-612,10.基金项目
福建省自然科学基金(2020J01297)Supported by The Natural Science Foundation of Fujian Province(2020J01297) （2020J01297）
