航天器环境工程2024，Vol.41Issue(2)：225-233,9.DOI:10.12126/see.2023146
FinFET器件单粒子翻转物理机制研究评述
Review on the physical mechanisms of single event upset of FinFET devices
王仕达 1张洪伟 2唐民 1梅博 1孙毅1
作者信息
- 1. 中国空间技术研究院,北京 100094
- 2. 国防科技大学 计算机科学与技术学院,长沙 410073||中国空间技术研究院,北京 100094
- 折叠
摘要
Abstract
Fin field-effect transistor(FinFET)devices have become an important choice for future space applications due to their high integration and high computational density.The radiation sensitivity of FinFET devices is closely related to their fabrication processes and operating conditions.To understand the single event upset(SEU)sensitivity mechanism of FinFET devices,a number of relevant researches conducted both domestically and abroad were reviewed in this article.Based on the SEU machanism,the influence of different operating conditions such as the feature size of FinFET devices,the power supply voltage,and the linear energy transfer(LET)values of incident particles on the SEU susceptibility of FinFETs were analyzed.Finally,an outlook on the research direction for SEUs of FinFET devices based on practical applications was provided.关键词
鳍式场效应晶体管/单粒子翻转/软错误率/静态随机存取存储器Key words
FinFET/single event upset(SEU)/soft error rate(SER)/SRAM分类
信息技术与安全科学引用本文复制引用
王仕达,张洪伟,唐民,梅博,孙毅..FinFET器件单粒子翻转物理机制研究评述[J].航天器环境工程,2024,41(2):225-233,9.
