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腐蚀法制备SiC量子点粒径调控及尺寸对其光学性能的影响

康杰 丁紫阳 王晓燕 李连荣 孙为云 焦璨 宋月鹏

人工晶体学报2024,Vol.53Issue(4):684-691,8.
人工晶体学报2024,Vol.53Issue(4):684-691,8.

腐蚀法制备SiC量子点粒径调控及尺寸对其光学性能的影响

Particle Size Regulation of SiC Quantum Dots Prepared by Corrosion Method and Effect of Size on Optical Properties

康杰 1丁紫阳 1王晓燕 1李连荣 1孙为云 1焦璨 1宋月鹏2

作者信息

  • 1. 郑州职业技术学院新材料工程学院,郑州 450121
  • 2. 山东农业大学机械与电子工程学院,泰安 271000
  • 折叠

摘要

Abstract

Silicon carbide quantum dots(QDs)were prepared by simple chemical etching method using a mixture of hydrofluoric acid,nitric acid,and analytically pure sulfuric acid as etchants.Ultrasonic cavitation fragmentation was performed on the corrosive mixture,and then it was subjected to high-speed tomographic cutting in a concentration gradient solvent to obtain silicon carbide QDs with excellent optical properties and controllable particle size.The evolution process of microstructure of SiC QDs during corrosion process,the microstructure and emission spectra of SiC QDs were detected and analyzed,and then correlation mechanism at quantum dots size,spectrum,and color was established by emission spectra as a link.The results show that under the conditions of a=1 000 hypergravity coefficient and a centrifugation time of 120 min,the average diameter of QDs at 0,30,and 60 mm displacement from the liquid surface is about 2,5,and 7 nm.Under single wavelength excitation,as the diameter of SiC QDs changes from 2→5→7 nm,the relative intensity peak of photoluminescence shows a red shift from 417→435→445 nm,and the luminescence color also show a corresponding change pattern of blue green→green→yellow green;further research had found that the full width at half maximum of the emission spectra of QDs of three sizes show an increase of 81→97→106 nm with increasing liquid depth.Preliminary analysis suggests that it was due to the higher uniformity of particle size distribution of quantum dots near the upper liquid surface compared to those far away from the upper liquid surface after high-speed centrifugal chromatography cutting.

关键词

SiC量子点/微观形貌/尺寸调控/特征发射光谱/颜色

Key words

SiC QD/micro morphology/size regulation/characteristic emission spectroscopy/color

分类

通用工业技术

引用本文复制引用

康杰,丁紫阳,王晓燕,李连荣,孙为云,焦璨,宋月鹏..腐蚀法制备SiC量子点粒径调控及尺寸对其光学性能的影响[J].人工晶体学报,2024,53(4):684-691,8.

基金项目

河南省科技攻关项目(222102220118) (222102220118)

人工晶体学报

OA北大核心CSTPCD

1000-985X

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