物理学进展2024，Vol.44Issue(2)：96-101,6.DOI:10.13725/j.cnki.pip.2024.02.003
纳米CMOS器件中热载流子产生缺陷局域分布的表征
Profiling of the Local Distribution of Hot-Carrier-Induced Defects in Nanoscale CMOS Devices
摘要
Abstract
A surface potential technique is proposed to characterize the local distribution of hot-carrier-induced interface states and oxide charge in nanoscale CMOS devices.These defects are produced by the hot carrier injection stress in the Si/SiO2 interface and the gate oxide layer.With the increase of the stress time,the interface state and oxide charge will cause the drift of the device parameters such as the threshold voltage.Based on the DIBL effect,the threshold voltage offset at the peak of the surface potential is selected to characterize the number of HCI induced interface state and oxide charge at the corresponding position of the channel.The distribution of threshold voltage offset with source/drain voltage before and after HCI stress was measured.The local distribution of interface state and oxide charge numbers along the channel are obtained by surface potential model.In this paper,the distributions of interface state and oxide charge induced by HCI stress in 32 nm CMOS devices are accurately characterized,and the mechanism of HCI generation is analyzed.关键词
CMOS器件/热载流子注入/界面态/电荷陷阱Key words
CMOS device/hot carrier injection/interface state/oxide charge分类
信息技术与安全科学引用本文复制引用
马丽娟,陶永春..纳米CMOS器件中热载流子产生缺陷局域分布的表征[J].物理学进展,2024,44(2):96-101,6.基金项目
本文感谢国家国家自然科学基金项目(12274232,12104232)的资助. （12274232,12104232）
