The Roadmap of 2D Materials and Devices Toward ChipsOACSTPCDEI
Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.
Anhan Liu;Xiaowei Zhang;Ziyu Liu;Yuning Li;Xueyang Peng;Xin Li;Yue Qin;Chen Hu;Yanqing Qiu;Han Jiang;Yang Wang;Yifan Li;Jun Tang;Jun Liu;Hao Guo;Tao Deng;Songang Peng;He Tian;Tian‑Ling Ren;
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100049,People’s Republic of ChinaSchool of Microelectronics,Fudan University,Shanghai 200433,People’s Republic of ChinaSchool of Electronic and Information Engineering,Beijing Jiaotong University,Beijing 100044,People’s Republic of ChinaHigh‑Frequency High‑Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of ChinaState Key Laboratory of Dynamic Measurement Technology,Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement,North University of China,Taiyuan 030051,People’s Republic of ChinaHigh‑Frequency High‑Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics,Beijing 100029,People’s Republic of China
Two-dimensional materialsRoadmapIntegrated circuitsPost-Moore era
《Nano-Micro Letters》 2024 (006)
P.343-438 / 96
This work was supported in part by STI 2030-Major Projects under Grant 2022ZD0209200,sponsored by Tsinghua-Toyota Joint Research Fund,in part by National Natural Science Foundation of China under Grant 62374099,Grant 62022047,Grant U20A20168,Grant 51861145202,Grant 51821003,and Grant 62175219;in part by the National Key R&D Program under Grant 2016YFA0200400;in part by Beijing Natural Science-Xiaomi Innovation Joint Fund Grant L233009;in part supported by Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies(JIAOT KF202204);in part by the Daikin-Tsinghua Union Program,in part sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program,in part by the Guoqiang Institute,Tsinghua University,in part by the Research Fund from Beijing Innovation Center for Future Chip,in part by Shanxi“1331 Project”Key Subjects Construction,in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(2019120);the opening fund of Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,in part by the project of MOE Innovation Platform,and in part by the State Key Laboratory of Integrated Chips and Systems.
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