Proton‑Prompted Ligand Exchange to Achieve High‑Efficiency CsPbI_(3) Quantum Dot Light‑Emitting DiodesOACSTPCDEI
CsPbI_(3)perovskite quantum dots(QDs)are ideal materials for the next generation of red light-emitting diodes.However,the low phase stability of CsPbI_(3)QDs and long-chain insulating capping ligands hinder the improvement of device performance.Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control.Here,we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI_(3)QDs.This exchange strategy maintained the size and morphology of CsPbI_(3)QDs and improved the optical properties and the conductivity of CsPbI_(3)QDs films.As a result,high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45%and an operational half-life of 10.79 h.
Yanming Li;Ming Deng;Xuanyu Zhang;Lei Qian;Chaoyu Xiang;
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315300,People’s Republic of China Division of Functional Materials and Nanodevices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,People’s Republic of ChinaLaboratory of Advanced Nano‑Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315300,People’s Republic of China Division of Functional Materials and Nanodevices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,People’s Republic of China Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,Zhejiang,People’s Republic of ChinaLaboratory of Advanced Nano‑Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315300,People’s Republic of China Division of Functional Materials and Nanodevices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,People’s Republic of China University of Nottingham Ningbo China,Ningbo 315100,People’s Republic of ChinaLaboratory of Advanced Nano‑Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315300,People’s Republic of China Division of Functional Materials and Nanodevices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,People’s Republic of China Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,People’s Republic of China
电子信息工程
CsPbI_(3) perovskite quantum dotsLight-emitting diodesLigand exchangeProton-prompted in-situ exchange
《Nano-Micro Letters》 2024 (006)
P.53-62 / 10
This work was financially supported by the National Key Research and Development Program of China(2022YFB3602902);the Key Projects of National Natural Science Foundation of China(62234004);Innovation and Entrepreneurship Team of Zhejiang Province(2021R01003);Science and Technology Innovation 2025 Major Project of Ningbo(2022Z085);Ningbo 3315 Programme(2020A-01-B);YONGJIANG Talent Introduction Programme(2021A-038-B);Flexible Electronics Zhejiang Province Key Laboratory Fund Project(2022FEO02);Zhejiang Provincial Natural Science Foundation of China(LR21F050001).
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