机电工程技术2024，Vol.53Issue(4)：134-137,173,5.DOI:10.3969/j.issn.1009-9492.2024.04.030
外延生长对GaN基PIN型器件的影响研究
Research on the Influence of Epitaxial Growth on GaN-based PIN-type Devices
摘要
Abstract
The growth of PIN-type GaN epitaxial materials is achieved,and the key factors affecting device performance,such as the growth temperature and flow rate during the growth of the i-GaN epitaxial layer,are thoroughly investigated.Results show that appropriate growth temperature and gas flow rate effectively improve the dislocation density and background doping of GaN,enhancing its crystal quality.However,excessively high or low growth temperatures and low gas flow rates may result in the incorporation of impurity atoms such as C and O,leading to higher dislocations and defects.PIN-type GaN devices are fabricated,and the influence of different p-layer doping concentrations on their electrical I-V characteristics is explored.Higher doping concentrations facilitate the preparation of low barrier Ohmic contacts,resulting in superior PN junction characteristics.A comparison is made between Ni/Cr and Ni/Au metal contacts regarding their effects on device I-V characteristics.The results indicate that using Ni/Au for P-type Ohmic contacts yields lower reverse leakage currents.Moreover,Au exhibits superior stability and withstands pressure better compared to Cr.The study delved into the impact of growth conditions on the performance of PIN-type GaN epitaxial materials and thoroughly investigated the effects of doping concentration and metal contacts on electrical properties through the fabrication of GaN-based PIN-type devices.关键词
GaN/PIN/生长温度和气流/p层掺杂浓度/欧姆接触/漏电流Key words
GaN/PIN/growth temperature and flow rate/p-layer doping concentration/ohmic contact/leakage current分类
信息技术与安全科学引用本文复制引用
葛子琪,邹继军,绍春林,赖穆人,赖兴阳,彭增涛..外延生长对GaN基PIN型器件的影响研究[J].机电工程技术,2024,53(4):134-137,173,5.基金项目
国家自然科学基金资助项目(12275049) （12275049）
江西省国际科技合作重点项目(20232BBH80005) （20232BBH80005）
2022年度抚州市"揭榜挂帅"重大项目 （）
