机电工程技术2024，Vol.53Issue(4)：273-277,5.DOI:10.3969/j.issn.1009-9492.2024.04.060
基于PS球自组装技术的GaN纳米柱阵列ICP刻蚀工艺研究
Research on ICP Etching Process of GaN Nanopillar Array Based on PS Sphere Self-assembly Technology
摘要
Abstract
P-type gallium nitride grown on sapphire substrate is selected as the material,and PS spheres prepared by self-assembly technology are used as masks,inductively coupled plasma(ICP)dry etching method is used to prepare nanostructures with regular shape and uniform period.During the preparation process,the morphology of gallium nitride nanostructures is affected by many factors,such as the morphology of colloidal spherical mask self-assembly,the type of gas injected by ICP etching,the proportion of gas,the etching power source,and the etching time.The effects of gas type,gas proportion,etching power source and etching time on the morphology of gallium nitride nanostructures are studied systematically and optimized.The morphologies of gallium nitride are analyzed by scanning electron microscopy(SEM).The results showed that:(1)With the increase of etching power source and etching time,the size of PS sphere of the mask layer will decrease and the diameter of the nanostructures obtained by etching will decrease;(2)the morphology and etching rate of gallium nitride nanostructures are affected by the type and proportion of gases that are etchable.Under the action of Ar and CF4 or SF6 combined gases,the etching rate is relatively slow at 15 nm/min.The combined gas action rate of Cl2 and BCl3 can reach 150 nm/min.关键词
PS球自组装/ICP刻蚀/GaN纳米柱/刻蚀速率Key words
PS balls self-assemble/ICP etching/GaN nanopillars/etch rate分类
信息技术与安全科学引用本文复制引用
谢婷,冯林,杨丽艳,邹继军,邓文娟..基于PS球自组装技术的GaN纳米柱阵列ICP刻蚀工艺研究[J].机电工程技术,2024,53(4):273-277,5.基金项目
江西省科技厅重点研发项目(20203BBE53030) （20203BBE53030）
