液晶与显示2024，Vol.39Issue(4)：447-465,19.DOI:10.37188/CJLCD.2024-0032
高迁移率金属氧化物半导体薄膜晶体管的研究进展
Research progress of high mobility metal oxide semiconductor thin film transistors
摘要
Abstract
Thin-film transistor(TFT)based on metal oxide semiconductor(MOS)has become a key technology to boost the development of the flat panel display or flexible display industry due to their high field-effect mobility(μFE),extremely low cut-off leakage current and good large-area electrical uniformity.After more than 30 years of research,amorphous indium gallium zinc oxide(a-IGZO)is the first to be popularized in TFT by replacing the amorphous silicon(a-Si).However,in order to simultaneously meet the multiple upgrade requirements of the display industry for higher productivity,better display performance(such as high resolution,high refresh rate,etc.)and lower power consumption,MOS TFTs technology with higher mobility is required.From the perspective of solid-state physics,this paper reviews the research progress of MOS TFTs to achieve high mobility characteristics through multi-component MOS materials,and discusses the relationship between mobility and device stability.Finally,the status quo and development trend of MOS TFTs are summarized and prospected.关键词
金属氧化物半导体/薄膜晶体管/场效应迁移率/偏压稳定性Key words
metal oxide semiconductor/thin-film transistor/field-effect mobility/bias stability分类
信息技术与安全科学引用本文复制引用
李强,葛春桥,陈露,钟威平,梁齐莹,柳春锡,丁金铎..高迁移率金属氧化物半导体薄膜晶体管的研究进展[J].液晶与显示,2024,39(4):447-465,19.基金项目
中山市科技计划(No.LJ2021006,No.CXTD2022005,No.2022A1009)Supported by Zhongshan Science and Technology Development Plan(No.LJ2021006,No.CXTD2022005,No.2022A1009) （No.LJ2021006,No.CXTD2022005,No.2022A1009）
