液晶与显示2024，Vol.39Issue(4)：466-471,6.DOI:10.37188/CJLCD.2024-0042
脉冲对InGaZnO薄膜晶体管性能的影响
Effect of pulse on performance of InGaZnO thin film transistor
丘鹤元 1王洋 1谢鑫 1李宗祥 1陈周煜 1王宝强 1王文超 1刘正 1刘耀 1刘娜妮1
作者信息
- 1. 福州京东方光电科技有限公司,福建 福州 350300
- 折叠
摘要
Abstract
Ultra-large IGZO(InGaZnO)products were prone to Abnormal Display(AD)during reliability evaluation at high temperature and humidity(50℃/80%).The main reason was that the key device's(M2)transfer characteristic curve(IDS-VGS)of GOA(Gate Driver on Array)had a serious positive shift in the evaluation.In this paper,the real working environment of GOA's key device(M2)was simulated by pulse experiment,and the bad phenomenon of serious positive shift of transfer characteristic curve was reproduced.By setting different pulse experiments,the main influencing factor was revealed.When the device(M2)was turned off,the VDS(pressure difference between Drain and Source)was too large,so that the oxygen vacancy V+O in the IGZO layer migrated to the boundary of IGZO and GI(Gate Insulator)and to the Source at the same time under the electric field.Due to the electrons trapping effect of oxygen vacancy V+O,the transfer characteristic curve would eventually shift positively.It was found that the migrated oxygen vacancy V+O can be restored after heating.In addition,without changing the IGZO film forming conditions,by reducing the VDS pressure when the device(M2)was turned off,the ultra-large IGZO product did not occur AD defects during the reliability evaluation at high temperature and humidity for 2 000 h.关键词
InGaZnO薄膜晶体管/集成栅极驱动电路/异常显示/阈值电压漂移Key words
InGaZnO thin film transistor/gate driver on array/abnormal display/threshold voltage shift分类
信息技术与安全科学引用本文复制引用
丘鹤元,王洋,谢鑫,李宗祥,陈周煜,王宝强,王文超,刘正,刘耀,刘娜妮..脉冲对InGaZnO薄膜晶体管性能的影响[J].液晶与显示,2024,39(4):466-471,6.
