Journal of Semiconductors2024，Vol.45Issue(5)：P.61-68,8.DOI:10.1088/1674-4926/45/5/052302
A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate
Jinye Wang 1Jun Liu 1Zhenxin Zhao1
作者信息
- 1. School of Integrated Circuit Science and Engineering,Hangzhou Dianzi University,Hangzhou 310018,China
- 折叠
摘要
关键词
small-signal model/dual field-plate(FP)/GaN high-electron-mobility transistors(HEMT)/parameter extraction分类
信息技术与安全科学引用本文复制引用
Jinye Wang,Jun Liu,Zhenxin Zhao..A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate[J].Journal of Semiconductors,2024,45(5):P.61-68,8.
