首页|期刊导航|Journal of Semiconductors|A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plateOACSTPCDEI

中文摘要

An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors(HEMTs)is proposed,which considers a dual-field-plate(FP)made up of a gate-FP and a source-FP.The equivalent circuit of the…查看全部>>

Jinye Wang;Jun Liu;Zhenxin Zhao

School of Integrated Circuit Science and Engineering,Hangzhou Dianzi University,Hangzhou 310018,ChinaSchool of Integrated Circuit Science and Engineering,Hangzhou Dianzi University,Hangzhou 310018,ChinaSchool of Integrated Circuit Science and Engineering,Hangzhou Dianzi University,Hangzhou 310018,China

电子信息工程

small-signal modeldual field-plate(FP)GaN high-electron-mobility transistors(HEMT)parameter extraction

《Journal of Semiconductors》 2024 (5)

P.61-68,8

10.1088/1674-4926/45/5/052302

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