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The study of lithographic variation in resistive random access memory

Yuhang Zhang Guanghui He Feng Zhang Yongfu Li Guoxing Wang

Journal of Semiconductors2024，Vol.45Issue(5)：P.69-79,11.

Journal of Semiconductors2024，Vol.45Issue(5)：P.69-79,11.DOI:10.1088/1674-4926/45/5/052303

The study of lithographic variation in resistive random access memory

Yuhang Zhang ¹Guanghui He ¹Feng Zhang ²Yongfu Li ¹Guoxing Wang¹

作者信息

1. Department of Micro-Nano Electronics,Shanghai Jiao Tong University,Shanghai 200240,China MoE Key Lab of Artificial Intelligence,Shanghai Jiao Tong University,Shanghai 200240,China
2. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
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摘要

关键词

layout/lithography/process variation/resistive random access memory

分类

信息技术与安全科学

引用本文复制引用

Yuhang Zhang,Guanghui He,Feng Zhang,Yongfu Li,Guoxing Wang..The study of lithographic variation in resistive random access memory[J].Journal of Semiconductors,2024,45(5):P.69-79,11.

基金项目

supported in part by the Open Fund of State Key Laboratory of Integrated Chips and Systems,Fudan University （）

in part by the National Science Foundation of China under Grant No.62304133 and No.62350610271. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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