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首页|期刊导航|Journal of Semiconductors|Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao

Journal of Semiconductors2024,Vol.45Issue(5):P.90-98,9.
Journal of Semiconductors2024,Vol.45Issue(5):P.90-98,9.DOI:10.1088/1674-4926/45/5/052502

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

Haifeng Chen 1Xiaocong Han 1Chenlu Wu 1Zhanhang Liu 1Shaoqing Wang 1Xiangtai Liu 1Qin Lu 1Yifan Jia 1Zhan Wang 1Yunhe Guan 1Lijun Li 1Yue Hao2

作者信息

  • 1. Key Laboratory of Advanced Semiconductor Devices and Materials,School of Electronic Engineering,Xi’an University of Posts andT elecommunications,Xi’an 710121,China
  • 2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi''an 710071,China
  • 折叠

摘要

关键词

β-Ga_(2)O_(3)nanobelt/carbothermal reduction/UV light/dual-Schottky coupling device

分类

信息技术与安全科学

引用本文复制引用

Haifeng Chen,Xiaocong Han,Chenlu Wu,Zhanhang Liu,Shaoqing Wang,Xiangtai Liu,Qin Lu,Yifan Jia,Zhan Wang,Yunhe Guan,Lijun Li,Yue Hao..Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties[J].Journal of Semiconductors,2024,45(5):P.90-98,9.

基金项目

supported by Natural Science Basic Research Program in Shaanxi Province of China(No.2023-JCYB-574) (No.2023-JCYB-574)

National Natural Science Foundation of China(No.62204203). (No.62204203)

Journal of Semiconductors

OACSTPCDEI

1674-4926

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