碲镉汞PIN结构雪崩器件的Ⅰ区材料晶体质量研究OA北大核心CSTPCD
Study on crystal quality of materials in Zone Ⅰ of APD P-I-N HgCdTe
本文对中波红外PIN结构的碲镉汞(HgCdTe)雪崩器件关键雪崩区域的材料晶体质量进行研究.通过在实验材料上对PIN结构雪崩器件的全过程工艺模拟,采用微分霍尔、微分少子寿命等测试手段进行材料表征,评估获得了关键雪崩区域的真实材料晶体质量.研究发现,现有优化工艺下雪崩区域的晶体质量良好,拟合材料的SRH寿命最好能达到20.7 μs,可达到原生材料SRH寿命的相当水平,满足高质量中波碲镉汞雪崩器件的研制要求.同时,我们以获得的雪崩区域SRH寿命为基础,对HgCdTe APD结构器件进行相应2维数值模拟,获得理论最优的暗电流密度8.7×10-10 A/cm2.
In this paper,we investigated the crystal quality of Mercury Cadmium Telluride(HgCdTe)materials in the key avalanche region of avalanche photodiode detectors(APDs)with MWIR PIN structure.We simulated the entire process of the PIN APD device on the experimental materials and used differential Hall testing and differential minority lifetime testing to evaluate the material's real crystal quality in the key avalanche area.It is found that the crystal quality of the avalanche region under the optimized process is good.Its Shockley-Read-Hall(SRH)lifetime is 20.7 μs,which can be comparable to that of the primary HgCdTe materials.This meets the development requirements for high-quality MWIR HgCdTe avalanche devices.Additionally,based on the obtained SRH lifetime in the avalanche region,we con-ducted corresponding two-dimensional numerical simulations on HgCdTe APD structural devices to determine the theo-retically optimal dark current density of 8.7×10-10 A/cm2.
沈川;张竞;杨辽;郭慧君;谢浩;周梅华;陈路;何力
中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海 200083
物理学
碲镉汞雪崩器件少子寿命暗电流
HgCdTeAPDlifetimedark current
《红外与毫米波学报》 2024 (002)
174-178 / 5
上海市自然科学基金资助项目(21ZR1473500);国家自然科学基金资助项目(62204248);上海市青年科技英才杨帆计划(22YF1455900)Supported by the Shanghai Natural Science Foundation(21ZR1473500);the National Natural Science Foundation of China(62204248);the Shanghai Sailing Program(22YF1455900)
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