红外与毫米波学报2024，Vol.43Issue(2)：174-178,5.DOI:10.11972/j.issn.1001-9014.2024.02.005
碲镉汞PIN结构雪崩器件的Ⅰ区材料晶体质量研究
Study on crystal quality of materials in Zone Ⅰ of APD P-I-N HgCdTe
摘要
Abstract
In this paper,we investigated the crystal quality of Mercury Cadmium Telluride(HgCdTe)materials in the key avalanche region of avalanche photodiode detectors(APDs)with MWIR PIN structure.We simulated the entire process of the PIN APD device on the experimental materials and used differential Hall testing and differential minority lifetime testing to evaluate the material's real crystal quality in the key avalanche area.It is found that the crystal quality of the avalanche region under the optimized process is good.Its Shockley-Read-Hall(SRH)lifetime is 20.7 μs,which can be comparable to that of the primary HgCdTe materials.This meets the development requirements for high-quality MWIR HgCdTe avalanche devices.Additionally,based on the obtained SRH lifetime in the avalanche region,we con-ducted corresponding two-dimensional numerical simulations on HgCdTe APD structural devices to determine the theo-retically optimal dark current density of 8.7×10-10 A/cm2.关键词
碲镉汞/雪崩器件/少子寿命/暗电流Key words
HgCdTe/APD/lifetime/dark current分类
数理科学引用本文复制引用
沈川,张竞,杨辽,郭慧君,谢浩,周梅华,陈路,何力..碲镉汞PIN结构雪崩器件的Ⅰ区材料晶体质量研究[J].红外与毫米波学报,2024,43(2):174-178,5.基金项目
上海市自然科学基金资助项目(21ZR1473500) （21ZR1473500）
国家自然科学基金资助项目(62204248) （62204248）
上海市青年科技英才杨帆计划(22YF1455900)Supported by the Shanghai Natural Science Foundation(21ZR1473500) （22YF1455900）
the National Natural Science Foundation of China(62204248) （62204248）
the Shanghai Sailing Program(22YF1455900) （22YF1455900）
