具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN毫米波MIS-HEMTsOA北大核心CSTPCD

In this paper,we demonstrated SiNx/AlN/GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs)with low noise and high linearity,by in-situ growth of SiNx gate dielectrics on ultra-thin barrier AlN/GaN heterostructure.Deep-level transient spectroscopy(DLTS)shows a traps-level depth of 0.236 eV,a capture cross-section of 3.06×10-19 cm-2,and an extracted interface state density of 1010-1012 cm-2eV-1,which confirms that the grown SiNx can reduce the interface state.The devices exhibit excellent DC,small sig-nal,and power performance,with a maximum saturation output current(Idmax)of 2.2 A/mm at the gate voltage(Vgs)of 2 V and the gate length of 0.15 μm,a maximum current cutoff frequency(fT)of 65 GHz,a maximum power cutoff frequency(fMAX)of 123 GHz,a minimum noise figure(NFmin)of the device of 1.07 dB and the gain of 9.93 dB at 40 GHz.The two-tone measurements at the Vds of 6V,yield a third-order intermodulation output power(OIP3)of 32.6 dBm,and OIP3/Pdc of 11.2 dB.Benefited from the high-quality SiNx/AlN interface,the MIS-HEMTs exhibited excellent low noise and high linearity,revealing its potential in applications of millimeter waves.