红外与毫米波学报2024，Vol.43Issue(2)：200-206,7.DOI:10.11972/j.issn.1001-9014.2024.02.009
具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN毫米波MIS-HEMTs
High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves
摘要
Abstract
In this paper,we demonstrated SiNx/AlN/GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs)with low noise and high linearity,by in-situ growth of SiNx gate dielectrics on ultra-thin barrier AlN/GaN heterostructure.Deep-level transient spectroscopy(DLTS)shows a traps-level depth of 0.236 eV,a capture cross-section of 3.06×10-19 cm-2,and an extracted interface state density of 1010-1012 cm-2eV-1,which confirms that the grown SiNx can reduce the interface state.The devices exhibit excellent DC,small sig-nal,and power performance,with a maximum saturation output current(Idmax)of 2.2 A/mm at the gate voltage(Vgs)of 2 V and the gate length of 0.15 μm,a maximum current cutoff frequency(fT)of 65 GHz,a maximum power cutoff frequency(fMAX)of 123 GHz,a minimum noise figure(NFmin)of the device of 1.07 dB and the gain of 9.93 dB at 40 GHz.The two-tone measurements at the Vds of 6V,yield a third-order intermodulation output power(OIP3)of 32.6 dBm,and OIP3/Pdc of 11.2 dB.Benefited from the high-quality SiNx/AlN interface,the MIS-HEMTs exhibited excellent low noise and high linearity,revealing its potential in applications of millimeter waves.关键词
SiNx栅介质/MOCVD/MIS-HEMTs/界面态/低噪声/线性度/毫米波Key words
SiNx gate dielectrics/MOCVD/MIS-HEMTs/interface state/low noise/linearity/millimeter waves分类
数理科学引用本文复制引用
袁静,陈晓娟,景冠军,王建超,汪柳,高润华,张一川,姚毅旭,魏珂,李艳奎..具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN毫米波MIS-HEMTs[J].红外与毫米波学报,2024,43(2):200-206,7.基金项目
Supported by the National Natural Science Foundation of China(62304252) （62304252）
the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)and IMECAS-HKUST-Joint Laboratory of Microelectronics （CAS）
