中国电机工程学报2024，Vol.44Issue(9)：3656-3664,中插27,10.DOI:10.13334/j.0258-8013.pcsee.223045
栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究
Effect of Gate Oxide Degradation on SiC MOSFET Gate Turn-on Oscillation
摘要
Abstract
The gate oxide degradation has become a crucial factor restricting the reliability of SiC metal oxide semiconductor field effect transistor(MOSFET).This paper attempts to obtain gate oxide state information by using the high-frequency(HF)switching oscillations caused by SiC MOSFETs high-speed switching in converters.The effect of gate oxide degradation on SiC MOSFETs gate turn-on oscillation is explored.First,the aging mechanism of SiC MOSFETs gate oxide and its influence on device turn-on time are analyzed.Then,a multi-stages HF equivalent model of gate loop during turn-on transient is established to reveal the formation mechanism and dominating factors of gate turn-on oscillation.Finally,a 33 V high voltage gate bias accelerated aging experiment is conducted for verification.The research results show that the threshold voltage of SiC MOSFETs increases and the turn-on speed becomes slower with the development of gate oxide aging.Consequently,a significant reduction of about 28%is observed in the gate turn-on oscillation current.The presented work is expected to provide a new idea for online monitoring of SiC MOSFETs gate oxide aging.关键词
碳化硅金属半导体氧化物场效应管(SiC MOSFET)/栅氧老化/栅极振荡/在线状态监测Key words
SiC metal oxide semiconductor field effect transistor(MOSFET)/gate oxide degradation/gate oscillation/online condition monitoring分类
信息技术与安全科学引用本文复制引用
李豪,成芮俊杰,向大为,田鑫..栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究[J].中国电机工程学报,2024,44(9):3656-3664,中插27,10.基金项目
国家自然科学基金项目(52177190,51907116) （52177190,51907116）
上海市自然科学基金项目(22ZR1425400). Project Supported by National Natural Science Foundation of China(52177190,51907116) （22ZR1425400）
Natural Science Foundation of Shanghai(22ZR1425400). （22ZR1425400）
