材料科学与工程学报2024，Vol.42Issue(2)：186-192,212,8.DOI:10.14136/j.cnki.issn1673-2812.2024.02.003
区熔n型碲化铋材料的制备及性能优化
Synthesis and Performance Enhancement of Zone-melting N-type Bismuth Telluride Thermoelectric Materials
摘要
Abstract
A series of iodide doped(SbI3,BiI3,TeI4)n-type Bi2Te3-xSex materials was prepared using zone melting methods.It was discovered that iodide doping could stabilize the carrier type,enhance electrical conductivity,and decrease the lattice thermal conductivity.With 0.14 wt%SbI3 doping,0.12 wt%BiI3 doping,and 0.07 wt%TeI4 doping,the maximum ZT values reach 0.85 at 405 K,0.96 at 362 K and 1.05 at 350 K,which are 21%,36%,28%higher than commercial n-type materials,respectively.关键词
n型碲化铋/区熔法/碘化物掺杂/热电性能Key words
n-type bismuth telluride/Zone melting/Iodide doping/Thermoelectric properties分类
通用工业技术引用本文复制引用
田源,汪波,李存成,余健,桑夏晗,赵文俞..区熔n型碲化铋材料的制备及性能优化[J].材料科学与工程学报,2024,42(2):186-192,212,8.基金项目
国家重点研发计划资助项目(2018YFB0703603,2019YFA0704903)、国家自然科学基金资助项目(11834012,52130203,51902237) （2018YFB0703603,2019YFA0704903）
