用于特殊环境的薄膜应变计的制备与表征OA北大核心CSTPCD
Fabrication And Characterization of Thin Film Strain Gauge for Strain Measurement Under Special Environment
使用磁控溅射制备了卡玛合金薄膜应变计,研究了退火温度对薄膜微观结构的影响,测试了薄膜的电学性能以及压阻响应特性,并进行了环境实验.结果表明,随着退火温度升高,薄膜的电阻率逐渐下降,电阻温度系数则逐渐升高,在室温下有最小的电阻温度系数(TCR),约为 59.9×10-6/℃,经过 200℃退火处理的薄膜应变计的应变灵敏度系数(GF)为 2.2,TCR为 64.4×10-6/℃.经历温湿循环、盐雾、霉菌试验后,薄膜的压阻特性变化不大,能耐受海洋特殊环境.
RF sputtering is used to create Karma alloy thin film strain gauges on alumina substrates.Karma alloy thin films'changes in e-lectrical characteristics and strain properties at various annealing temperatures are evaluated,and it is determined how annealing tempera-ture affects the surface morphology and crystal structure of Karma alloy thin films.The results demonstrate that as the annealing tempera-ture increases,the resistivity of the Karma alloy thin films gradually decreases,and its temperature coefficient of resistance gradually in-creases.Karma thin film strain gages are discovered to have the lowest TCR of 59.9×10-6/℃under room temperature.After 200℃an-nealing process,the Karma alloy thin films achieve the gage factor of 2.2,and the TCR of 64.4×10-6/℃.The piezoresistive characteristic of the thin film changes slightly after experiments of temperature humidity cycling,salt spray,and molding,it has ability to withstand the harsh conditions of the sea.
张丛春;康志鹏;雷鹏;闫博
上海交通大学微米/纳米加工技术国家重点实验室,上海 200240,China上海交通大学微米/纳米加工技术国家重点实验室,上海 200240,China||上海交通大学电子信息与电气工程学院,上海 200240,China
计算机与自动化
磁控溅射薄膜应变计电阻温度系数应变因子环境实验
magnetron sputteringthin-film strain gaugeresistance temperature coefficientstrain factorenvironmental experiments
《传感技术学报》 2024 (004)
589-596 / 8
2023年度"慧眼行动"项目
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