不同应变率加载下硅的高压相变行为OA北大核心CSTPCD

High pressure phase transition is one of the core concerns in the field of condensed matter physics,Earth and planetary science and material science.And the loading strain rate is an important influencing factor for the kinetics of phase transition.Due to the lack of in situ diagnostics of crystal structure under dynamic loading,and the limited experimental research on the phase transition behavior over a wide range of strain rates,there is no unified physical model to describe how the phase transition dynamics evolve from static compression to high strain rate shock compression.Since the high-pressure phase diagram of silicon is extremely rich and possesses a large number of substable phases,and at the same time,the kinetic factors play a crucial role in the high-pressure phase transition process of silicon,silicon is an ideal material for studying the high-pressure phase transition kinetics,which is of great significance for the theoretical modeling of universal phase-transition kinetic processes.Here,we take silicon as an example and present its phase transition behavior under quasi-static,medium strain rate and high strain rate loading in turn,highlighting the effect of loading strain rate on its high-pressure phase transition behavior.