四川大学学报（自然科学版）2024，Vol.61Issue(3)：238-246,9.DOI:10.19907/j.0490-6756.2024.034001
GaAs/AlGaAs异质结量子点接触中的散粒噪声实验研究
Experimental study of shot noise in GaAs/AlGaAs heterojunction quantum dot contact
摘要
Abstract
Quantum point contact is a kind of quasi one-dimensional confined quantum system with rich physi-cal connotation,and it is an ideal system for studying electron quantum transport.Shot noise generated by quantum point contact has become a hot spot of increasing interest in mesoscopic physics.In this paper,a quantum point contact device is designed in the traditional GaAs/AlGaAs material.The shot noise of the de-vice under zero magnetic field and high magnetic field is measured respectively.The variation law of the shot noise of the device under extremely low temperature of 20 mK with the source-drain bias,gate voltage and magnetic field is analyzed.The variation of Fano factor with gate voltage is obtained and compared with the conductance platform of the device,the scattering behavior of electrons in the first two hall channels from closing to opening is analyzed.Research in this paper will give us a deep understanding of the quantum trans-port properties of electrons in quantum point contact.关键词
量子点接触/电子量子输运/散粒噪声/Fano因子Key words
Quantum point contact/Quantum transport of electrons/Shot noise/Fano factor分类
数理科学引用本文复制引用
郭洪民,岳晓凯,何建红..GaAs/AlGaAs异质结量子点接触中的散粒噪声实验研究[J].四川大学学报（自然科学版）,2024,61(3):238-246,9.基金项目
国家重点研发计划项目(2022YFF0608302) （2022YFF0608302）
