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非化学计量溶液区熔法生长大尺寸InSe晶体及表征

金敏 马玉鹏 魏天然 林思琪 白旭东 史迅 刘学超

无机材料学报2024,Vol.39Issue(5):554-560,7.
无机材料学报2024,Vol.39Issue(5):554-560,7.DOI:10.15541/jim20230524

非化学计量溶液区熔法生长大尺寸InSe晶体及表征

Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method

金敏 1马玉鹏 2魏天然 2林思琪 1白旭东 3史迅 4刘学超4

作者信息

  • 1. 上海电机学院材料学院,上海 201306
  • 2. 上海交通大学 材料科学与工程学院,上海 200240
  • 3. 乌镇实验室,桐乡 314500
  • 4. 中国科学院 上海硅酸盐研究所,上海 200050
  • 折叠

摘要

Abstract

Indium selenide(InSe)is a Ⅲ-Ⅵ group semiconductor with interesting physical properties and has wide potential applications in the fields of photovoltaics,optics,thermoelectrics,and so on.However,the production of large-size InSe crystal is difficult due to the inconsistent melting of In and Se elements and peritectic reactions between InSe,In6Se7and In4Se3 phases.In this work,a zone melting method,which has advantages of low cost and solid-liquid interface optimization,is employed for InSe crystal preparation.Because the initial mole ratio of In to Se is of great importance to InSe crystal growth,the non-stoichiometric In0.52Se0.48 solution was precisely used for growth based on the peritectic reaction of In-Se system,resulting in a InSe crystal productivity ratio at about 83%.An ingot with dimensions φ27 mm× 130 mm is obtained with a typical slab-like InSe crystal in the size ofφ27 mm×50 mm.The successfully peeled cleavage plane exhibits the good single-crystalline character as only(00l)peaks are detected in the X-ray diffraction pattern.This crystal has a hexagonal structure,and its elements are distributed uniformly in the matrix with transmittance of~55.1%at 1800 nm wavelength,band gap energy of about 1.22 eV,a maximum electrical conductivity(σ)of about 1.55×102 S·m-1 along the(001)direction,and a lowest thermal conductivity(κ)of about 0.48 W·m-1·K-1 perpendicular to the(001)direction at 800 K.These results imply that the zone melting method is indeed an effective approach for fabricating large-size InSe crystal,which could be applied for various fields.Above measured electrical and thermal behaviors are expected to provide a significant reference for InSe crystal application in the future.

关键词

InSe晶体/区熔法/非化学计量/电导率/热导率

Key words

InSe crystal/zone melting method/non-stoichiometric/electrical conductivity/thermal conductivity

分类

化学化工

引用本文复制引用

金敏,马玉鹏,魏天然,林思琪,白旭东,史迅,刘学超..非化学计量溶液区熔法生长大尺寸InSe晶体及表征[J].无机材料学报,2024,39(5):554-560,7.

基金项目

National Natural Science Foundation of China(52272006,52371193,52001231) (52272006,52371193,52001231)

Shanghai Academic/Technology Research Leader(23XD1421200) (23XD1421200)

Oriental Scholars of Shanghai Universities(TP2022122) (TP2022122)

Space Application System of China Manned Space Program,Shanghai Rising-star Program(23QA1403900) (23QA1403900)

Chenguang Program supported by Shanghai Education Development Foundation & Shanghai Municipal Education Commission ()

Open Research Fund of Key Laboratory of Polar Materials and Devices,Ministry of Education ()

无机材料学报

OA北大核心CSTPCD

1000-324X

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