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Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials

Hangbo Zhou Sifan Li Kah-Wee Ang Yong-Wei Zhang

纳微快报（英文）2024，Vol.16Issue(7)：1-30,30.

纳微快报（英文）2024，Vol.16Issue(7)：1-30,30.DOI:10.1007/s40820-024-01335-2

Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials

Hangbo Zhou ¹Sifan Li ²Kah-Wee Ang ³Yong-Wei Zhang¹

作者信息

1. Institute of High Performance Computing(IHPC),Agency for Science,Technology and Research(A*STAR),1 Fusionopolis Way,#16-16 Connexis,Singapore 138632,Republic of Singapore
2. Department of Electrical and Computer Engineering,National University of Singapore,4 Engineering Drive 3,Singapore 117583,Republic of Singapore
3. Department of Electrical and Computer Engineering,National University of Singapore,4 Engineering Drive 3,Singapore 117583,Republic of Singapore||Institute of Materials Research and Engineering,Agency for Science,Technology and Research(A*STAR),2 Fusionopolis Way,Singapore 138634,Republic of Singapore
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摘要

关键词

2D materials/Memristors/Memtransistors/Crossbar array/In-memory computing

Key words

2D materials/Memristors/Memtransistors/Crossbar array/In-memory computing

引用本文复制引用

Hangbo Zhou,Sifan Li,Kah-Wee Ang,Yong-Wei Zhang..Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials[J].纳微快报（英文）,2024,16(7):1-30,30.

基金项目

This work was supported by the National Research Foundation,Singapore under Award No.NRF-CRP24-2020-0002. （）

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ISSN：2311-6706

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